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SD520S 03SHABE 1N400 307C1254 ED75A 29002 W25P010 EDZ27
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forward voltage 0.1 1 10 0 0.5 1 1.5 2 M1FL20U tl=150 c [max] tl=25 c [max] pulse measurement per diode tl=150 c [typ] tl=25 c [typ] forward voltage v f [v] forward current i f [a]
0 t p i o t d=t p /t 0 0.5 1 1.5 2 0 0.5 1 1.5 2 M1FL20U 0.3 forward power dissipation tj = 150 c sin 0.2 0.1 d=0.8 dc 0.5 0.05 average rectified forward current i o [a] forward power dissipation p f [w]
0 t p i o t d=t p /t 0 0.5 1 1.5 2 0 20 40 60 80 100 120 140 160 M1FL20U 0.3 derating curve sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r v r = v rm ambient temperature ta [ c] average rectified forward current i o [a] alumina substrate soldering land 2mm 2mm conductor layer 20 m substrate thickness 0.64mm
0 t p i o t d=t p /t 0 0.2 0.4 0.6 0.8 1 1.2 0 20 40 60 80 100 120 140 160 M1FL20U 0.3 derating curve sin 0.2 0.1 d=0.8 dc 0.5 0.05 0 v r v r = v rm ambient temperature ta [ c] average rectified forward current i o [a] glass-epoxy substrate soldering land 2mm 2mm conductor layer 35 m
peak surge forward capability 0 10 20 30 40 50 1 10 100 M1FL20U 2 5 20 50 i fsm 10ms 10ms 1 cycle number of cycles [cycles] peak surge forward current i fsm [a] non-repetitive, sine wave, tj=25 c before surge current is applied
1 10 100 M1FL20U 1 10 100 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 junction capacitance reverse voltage v r [v] junction capacitance cj [pf] f=1mhz tl=25 c typ per diode


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